42214 tkim tc-00003114/91400 ts im ta-1953 no.6621-1/6 http://onsemi.com semiconductor components industries, llc, 2014 april, 2014 5lp01sp p-channel small signal mosfet ? 50v, ? 0.07a, 23 , single spa features ? low on-resistance ? ultrahigh-speed switching ? 2.5v drive ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions value unit drain to source voltage v dss -50 v gate to source voltage v gss 10 v drain current (dc) i d -0.07 a drain current (pulse) i dp pw 10 s, duty cycle 1% -0.28 a power dissipation p d 0.25 w junction temperature tj 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7524-007 ordering number : en6621a 3 1 2 ordering & package information device package shipping memo 5lp01sp spa sc-72 500pcs./bag pb-free 5LP01SP-AC spa sc-72 2,500pcs./box marking electrical connection 123 4.0 3.8 3.0 2.2 0.7 0.7 0.6 0.4 0.4 0.4 0.5 3.0 1.8 15.0 1.3 1.3 1 : source 2 : drain 3 : gate spa xb lot no. stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
5lp01sp no.6621-2/6 electrical characteristics at ta=25c parameter symbol conditions value unit min typ max drain to source breakdown voltage v (br)dss i d =-1ma, v gs =0v -50 v zero-gate voltage drain current i dss v ds =-50v, v gs =0v 10 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a gate threshold voltage v gs (th) v ds =-10v, i d =-100 a -0.4 -1.4 v forward transconductance g fs v ds =-10v, i d =-40ma 70 100 ms static drain to source on-state resistance r ds (on)1 i d =-40ma, v gs =-4v 18 23 r ds (on)2 i d =-20ma, v gs =-2.5v 20 28 r ds (on)3 i d =-5ma, v gs =-1.5v 30 60 input capacitance ciss v ds =-10v, f=1mhz 7.4 pf output capacitance coss 4.2 pf reverse transfer capacitance crss 1.3 pf turn-on delay time t d (on) see speci ed test circuit. 20 ns rise time t r 35 ns turn-off delay time t d (off) 160 ns fall time t f 150 ns total gate charge qg v ds =-10v, v gs =-10v, i d =-70ma 1.40 nc gate to source charge qgs 0.16 nc gate to drain ?miller? charge qgd 0.23 nc forward diode voltage v sd i s =-70ma, v gs =0v 0.85 1.2 v switching time test circuit pw=10 s d.c. 1% 0v --4v v in p. g 50 g d i d = --40ma r l =607 v dd = --25v v out 5lp01sp s v in product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
5lp01sp no.6621-3/6 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.07 --0.06 --0.05 --0.04 --0.03 --0.02 --0.01 i d -- v ds v gs = --1.5v --2.0v --6.0v --4.0v --2.5v 0 0 --0.5 --1.0 --1.5 --2.0 --0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 --2.5 --3.0 --4.0 --3.5 i d -- v gs(th) v ds = --10v 0 10 -- 1 15 -- 2 20 -- 3 25 30 -- 4 -- 5 35 -- 6 40 --7 --8 --9 --10 r ds (on) -- v gs ta=25 c --0.01 10 --0.1 23 57 23 100 7 5 3 2 r ds (on) -- i d v gs = --4v it00090 it00092 it00091 it00093 ta=75c ta= --25 c 75c 25c --25c --3.0v --3.5v 25 c i d =--20ma --40ma gate to source voltage, v gs -- v drain current, i d -- a drain to source voltage, v ds -- v drain current, i d -- a drain current, i d -- a static drain to source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- --0.01 0.01 --0.1 23 57 23 0.1 1.0 7 5 3 2 7 5 3 2 g fs -- i d v ds = --10v --60 10 --40 15 --20 20 0 25 30 20 35 40 60 40 80 100 120 140 160 r ds (on) -- ta it00096 it00097 i d = --20ma, v gs = --2.5v i d = --40ma, v gs = --4.0v ta= --25c 75c 25c --0.01 10 --0.1 23 57 23 --0.001 --0.01 23 57 23 1000 100 7 5 3 2 7 5 3 2 r ds (on) -- i d v gs = --2.5v 10 100 7 5 3 2 r ds (on) -- i d v gs = --1.5v it00094 it00095 ta=75c 25c --25c ta=75c 25c --25c drain current, i d -- a forward transconductance, g fs -- s ambient temperature, ta -- c static drain to source on-state resistance, r ds (on) -- drain current, i d -- a static drain to source on-state resistance, r ds (on) -- drain current, i d -- a static drain to source on-state resistance, r ds (on) --
5lp01sp no.6621-4/6 0 0 -- 1 -- 2 0.2 -- 3 -- 4 -- 5 -- 6 -- 7 0.6 0.4 -- 8 -- 9 1.0 0.8 --10 1.4 1.2 1. 6 v gs -- qg sw time -- i d v ds = --10v i d = --70ma --0.01 10 --0. 1 23 57 100 7 5 3 2 7 5 3 2 1000 v dd = --25v v gs = --4v 0 0.1 1.0 --10 -- 5 10 7 5 3 2 7 5 3 2 7 5 3 2 --20 --15 --30 --25 100 --40 --35 --50 --45 ciss, coss, crss -- v ds ciss, coss, crss -- pf f=1mhz --0.5 --0.01 --0.8 --0.9 --1.0 --1.1 --0.6 --0.7 --0.1 3 2 7 5 3 2 --1.2 v gs =0 i f -- v sd it00098 it00100 it00101 it00099 ta=75c 25c - -25c ciss coss crss t d (on) t d (off) t r t f forward diode voltage, v sd -- v forward current, i f -- a drain current, i d -- a switching time, sw time -- ns gate to source voltage, v gs -- v drain to source voltage, v ds -- v total gate charge, qg -- nc it02382 ambient temperature, ta -- c p d -- ta power dissipation, p d -- w 0 0.30 0.15 0.20 0.10 0.05 0.25 0 40 120 160 80 20 100 140 60
5lp01sp no.6621-5/6 outline drawing 5LP01SP-AC mass (g) unit 0.13 * for reference mm
5lp01sp ps no.6621-6/6 note on usage : since the 5lp01sp is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products he rein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. outline drawing 5lp01sp mass (g) unit 0.13 * for reference mm
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